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ar c hive inf o rmati o n archive information MRF21085LSR3 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 1000 ma, p out = 19 watts avg., f = 2112.5 mhz, channel bandwidth = 3.84 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain ? 13.6 db drain efficiency ? 23% im3 @ 10 mhz offset ? - 37.5 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 41 dbc in 3.84 mhz channel bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 224 1.28 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.78 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) document number: mrf21085 rev. 11, 10/2008 freescale semiconductor technical data MRF21085LSR3 2110 - 2170 mhz, 90 w, 28 v lateral n - channel rf power mosfet case 465a - 06, style 1 ni - 780s ? freescale semiconductor, inc., 2008. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor MRF21085LSR3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain - source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) 3 3.9 5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.21 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss ? 3.6 ? pf functional tests (in freescale test fixture, 50 ohm system) 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.3 db @ 0.01% probability on ccdf. common - source amplifier power gain (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz) g ps 12 13.6 ? db drain efficiency (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz) 20 23 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz; im3 measured over 3.84 mhz bw at f1 - 10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? - 37.5 -35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz; acpr measured over 3.84 mhz at f1 - 5 mhz and f2 +5 mhz.) acpr ? -41 -38 dbc input return loss (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz) irl ? -12 -9 db 1. part is internally matched both on input and output. (continued)
ar c hive inf o rmati o n archive information MRF21085LSR3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) (continued) two - tone common - source amplifier power gain (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 13.6 ? db two - tone drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) ? 36 ? % two - tone intermodulation distortion (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd ? -31 ? dbc input return loss (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) irl ? -12 ? db p out , 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 2170 mhz) p1db ? 100 ? w
ar c hive inf o rmati o n archive information 4 rf device data freescale semiconductor MRF21085LSR3 figure 1. mrf21085l test circuit schematic rf input rf output z1 z2 v bias c1 c6 l1 dut v supply z3 c8 z7 c5 c7 z5 z6 r4 c4 z4 + c9 c3 c2 z8 c10 c11 c12 ++ + b1 r1 r2 r3 board 0.030 glass teflon ? , keene gx - 0300 - 55 - 22, r = 2.55 pcb etched circuit boards mrf21085 rev. 3, cmr z1 0.750 x 0.084 microstrip z2 1.015 x 0.084 microstrip z3 0.480 x 0.800 microstrip z4 0.750 x 0.050 microstrip z5 0.610 x 0.800 microstrip z6 0.885 x 0.084 microstrip z7 0.720 x 0.084 microstrip z8 0.800 x 0.070 microstrip table 5. mrf21085 test circuit component designations and values designators description b1 short ferrite bead, fair rite, #2743019447 c1, c6 43 pf chip capacitors, atc #100b430jca500x c2 10 pf chip capacitor, atc #100b100jca500x c3, c9 1000 pf chip capacitors, atc #100b102jca500x c4, c10 0.1 f chip capacitors, kemet #cdr33bx104akws c5 1.0 f tantalum chip capacitor, kemet #t491c105m050 c7 2.7 pf chip capacitor, atc #100b2r7jca500x c8 10 f tantalum chip capacitor, kemet #t495x106k035as4394 c11, c12 22 f tantalum chip capacitors, kemet #t491x226k035as4394 l1 1 turn, #20 awg, 0.100 id n1, n2 type n flange mounts, omni spectra #3052 - 1648 - 10 r1 1.0 k , 1/8 w chip resistor r2 180 k , 1/8 w chip resistor r3, r4 10 , 1/8 w chip resistors
ar c hive inf o rmati o n archive information MRF21085LSR3 5 rf device data freescale semiconductor figure 2. mrf21085l test circuit component layout mrf21085 r1 r2 r3 c5 c4 c3 c1 c6 c12 c8 c7 c2 c11 l1 b1 cut out c10 c9 r4 wb1 wb2 rev 3 freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
ar c hive inf o rmati o n archive information 6 rf device data freescale semiconductor MRF21085LSR3 typical characteristics ?55 ?50 ?45 ?40 ?35 ?30 ?25 10 4 figure 3. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power figure 4. intermodulation distortion products versus output power p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power im3, third order intermodulation distortion (dbc) , drain efficiency (%), g ps , power gain (db) p out , output power (watts avg.) n?cdma im3 (dbc), acpr (dbc) f, frequency (mhz) input return loss (db) , drain efficiency (%) figure 6. 2-carrier w-cdma broadband performance figure 7. cw performance 0 5 10 15 20 25 30 ?55 ?50 ?45 ?40 ?35 ?30 ?25 110 30 v dd = 28 vdc, i dq = 1000 ma f1 = 2135 mhz, f2 = 2145 mhz 3.84 mhz channel bandwidth ?45 ?60 ?50 ?40 ?30 ?25 5 10 25 30 35 45 10 4 intermodulation distortion (dbc) imd, p out , output power (watts) pep v dd = 28 vdc i dq = 1000 ma f1 = 2135 mhz f2 = 2145 mhz , drain efficiency (%), g ps , power gain (db) im3 (dbc), acpr (dbc), irl, 1150 ma 1300 ma 1000 ma i dq = 700 ma 850 ma 12 14 16 18 20 22 24 ?60 ?50 ?40 ?30 ?20 ?10 0 2110 2130 2150 2190 v dd = 28 vdc p out = 19 w (avg.) i dq = 1000 ma g ps acpr irl p out , output power (watts) g ps , power gain (db) 11.5 12 12.5 13 13.5 14 14.5 0 10 20 30 40 50 60 10 100 2 130 v dd = 28 vdc i dq = 1000 ma f = 2140 mhz g ps , drain efficiency (%) im3 g ps acpr 15 100 ?65 7th order 5th order 3rd order 100 v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz 2090 2170 im3 40 34 35 36 37 38 ?32 ?31 ?30 ?29 ?28 ?27 24 25 26 27 28 29 v dd , drain supply (v) figure 8. two-tone intermodulation distortion and drain efficiency versus drain supply intermodulation distortion (dbc) imd, , drain efficiency (%) i dq = 1000 ma f = 2140 mhz 10 mhz tone spacing imd 39 ?26 peak/avg. = 8.3 db @ 0.01% probability (ccdf) ?55 ?35 20 40 41 42 ?25 ?24 2?carrier w?cdma 10 mhz carrier spacing 3.84 mhz channel bandwidth peak/avg. = 8.3 db @ 0.01% probability (ccdf)
ar c hive inf o rmati o n archive information MRF21085LSR3 7 rf device data freescale semiconductor typical characteristics p out , output power (watts) pep g ps , power gain (db) 14.5 12.5 13 13.5 14 10 4 figure 9. two-tone power gain versus output power figure 10. two-tone broadband performance 10 15 20 25 30 35 40 ?40 ?35 ?30 ?25 ?20 ?15 ?10 2095 2110 2125 2140 2155 2170 2185 i dq = 1300 ma 1150 ma 700 ma g ps , power gain (db), , drain efficiency (%) intermodulation distortion (dbc) imd, f, frequency (mhz) input return loss (db) irl, irl i dq = 1000 ma 10 mhz tone spacing figure 11. intermodulation distortion products versus two - tone spacing ?20 0.1 1 30 f, tone spacing (khz) ?30 ?35 ?40 ?45 ?50 ?55 intermodulation distortion (dbc) imd, v dd = 28 vdc i dq = 1000 ma f = 2140 mhz v dd = 28 vdc p out = 90 w (pep) 100 1000 ma 850 ma v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz 7th order 5th order 3rd order 10 ?25 imd g ps figure 12. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw ?im3 in 3.84 mhz bw +im3 in 3.84 mhz bw ?acpr in 3.84 mhz bw +acpr in 3.84 mhz bw (db) +20 +30 0 ?10 ?40 ?50 ?60 ?70 ?80 ?20 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 ?30
ar c hive inf o rmati o n archive information 8 rf device data freescale semiconductor MRF21085LSR3 figure 13. series equivalent source and load impedance f mhz z source z load 2110 2140 2170 1.10 - j3.71 1.12 - j3.40 1.11 - j3.57 1.23 - j2.10 1.26 - j1.92 1.25 - j1.76 v dd = 28 v, i dq = 1000 ma, p out = 19 w avg. z o = 5 f = 2110 mhz f = 2170 mhz f = 2110 mhz f = 2170 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source z load
ar c hive inf o rmati o n archive information MRF21085LSR3 9 rf device data freescale semiconductor package dimensions case 465a - 06 issue h ni - 780s MRF21085LSR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ? ? ? 0.040 ? ? ? 1.02 z ? ? ? 0.030 ? ? ? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
ar c hive inf o rmati o n archive information 10 rf device data freescale semiconductor MRF21085LSR3 product documentation refer to the following documents to aid your design process. engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 11 oct. 2008 ? data sheet revised to reflect part status change, p. 1, including use of applicable overlay. ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn12779, p. 1, 2 ? data sheet archived. part no longer manufactured. ? added product documentation and revision history, p. 10
ar c hive inf o rmati o n archive information MRF21085LSR3 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf21085 rev. 11, 10/2008

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